@Article{CastroSoaPerRapAbr:2014:RoTePe,
               author = "Castro, S. De and Soares, D. A. W. and Peres, M. L. and Rappl, 
                         Paulo Henrique de Oliveira and Abramof, Eduardo",
          affiliation = "Departamento de F{\'{\i}}sica e Qu{\'{\i}}mica, Universidade 
                         Federal de Itajub{\'a}, PB 50Itajub{\'a}, Brazil and 
                         Departamento de F{\'{\i}}sica e Qu{\'{\i}}mica, Universidade 
                         Federal de Itajub{\'a}, PB 50Itajub{\'a}, Brazil and 
                         Departamento de F{\'{\i}}sica e Qu{\'{\i}}mica, Universidade 
                         Federal de Itajub{\'a}, PB 50Itajub{\'a}, Brazil and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Room temperature persistent photoconductivity in p -PbTe and p 
                         -PbTe:BaF2",
              journal = "Applied Physics Letters",
                 year = "2014",
               volume = "105",
               number = "16",
             keywords = "PbTe, Persistent Photoconductivity, Room temperature.",
             abstract = "We investigated the persistent photoconductivity effect observed 
                         in p-PbTe:BaF2 and undoped p-PbTe films in the temperature range 
                         of T = 100-300 K. It was observed that the PPC effect scales with 
                         temperature and that there is a transition in the relaxation time 
                         behavior around <150 K. We found that the transition is caused by 
                         the particular dynamics of the hole carries between the energy 
                         barriers that characterize the traps originated from disorder 
                         present in the samples. The analysis was performed by comparing 
                         the theory of the random potential with the experimental data and 
                         revealed the presence of both random local potential fluctuations 
                         and localized states, which can be attributed to the presence of 
                         disorder due BaF2 doping and Te vacancies.",
                  doi = "10.1063/1.4899140",
                  url = "http://dx.doi.org/10.1063/1.4899140",
                 issn = "0003-6951",
                label = "scopus 2014-11 CastroSoaPerRapAbr:2014:RoTePe",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}